RESEARCH CENTER FOR MODELING AND SIMULATION IN NANOELECTRONICS |
Nanoelectronics represents a strategic technology considering the wide range of possible applications such as Computing, Communications or Consumer electronics. In the semiconductor industry, Complementary Metal Oxide Semiconductor (CMOS) technology will certainly continue to have a predominant market position even after 2012. However, there are still a number of technological challenges, which have to be tackled if CMOS is to reach the 35nm channel length and 108 transistors per cm2 as predicted for 2012. This may offer opportunities for alternative nanodevices which may be integrated on a CMOS chip and enhance its functionality.
Emerging technology devices that could be considered as possible nanoelectronic circuit elements are for example Single Electron Tunneling (SET) devices, Molecular nanoelectronics or Quantum computing. However, many of the potential applications in nanoelectronics still require substantial work in order to become marketable technology. Therefore, research and development have to be quick enough to meet industrial requirements and to determine which technique is applicable for large-scale integrated circuits.
Within this objective, modeling behavior of these possible nanodevices is becoming more and more important and should allow to:
- Visualize what happens inside a device
- Optimize the devices under study
- Improve understanding of device Physics
Main objectives
The main objectives of the MODSIMNANO center are:
- transmitting properties of nanowire
- modeling quantum effects in electron transport
- RF circuit models for nanowires
- simulation of digital switching in quantum domain
Centre Staff
- 2 professors
- 4 associates - professors
- 3 lecturers
- 1 assistant-professors
- 4 PhD students
Main collaborations :
- Physics Department - TUI
- Mathematics department - TUI
- ENSEA - Cergy, France
- ESISAR - Grenoble, France
- ROMNET-NANO Network
Activity reports
More information on MODSIMNANO Research Center is available by contacting directly: Prof. Irinel Casian-Botez (icasian@etti.tuiasi.ro)